SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
氢原子辅助MBE生长对GaAs外延面形貌的影响
牛智川; Noetzel Richard; 周增圻; 吴荣汉; Ploog Klaus H
1998
Source Publication半导体学报
Volume19Issue:5Pages:327
Abstract该文研究了MBE通常生长条件和氢原子辅助生长条件下(100)、(331)、(210)、(311)等表面外延形貌的变化。
metadata_83Paul-Drude-Institut for Solid State Electronics;中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:423631
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19231
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
牛智川,Noetzel Richard,周增圻,等. 氢原子辅助MBE生长对GaAs外延面形貌的影响[J]. 半导体学报,1998,19(5):327.
APA 牛智川,Noetzel Richard,周增圻,吴荣汉,&Ploog Klaus H.(1998).氢原子辅助MBE生长对GaAs外延面形貌的影响.半导体学报,19(5),327.
MLA 牛智川,et al."氢原子辅助MBE生长对GaAs外延面形貌的影响".半导体学报 19.5(1998):327.
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