SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
低阈值1.3μm InGaAsP/InP应变补偿多量子阱DFB激光器LP-MOCVD生长
陈博; 王圩; 汪孝杰; 张静媛; 朱洪亮; 周帆; 王玉田; 马朝华; 张子莹; 刘国利
1998
Source Publication半导体学报
Volume19Issue:3Pages:218
Abstract报道了用低压-金属有机化学气相淀积(LP-MOCVD)方法制作1.3μm应变补偿多量子阱结构材料。X射线双晶衍射摇摆曲线可清晰地看到±4级卫星峰和卫星峰间的Pendellosong条纹。整个有源区的平均应变量几乎为零。用掩埋异质结(BH)条形工艺制备的含一级光栅的DFB激光器室温下阈值电流2~4mA,外量子效率0.33mW/mA,线性输出光功率达30mW,边模抑制比(SMSR)大于35dB。20~40℃下的特征温度T_0为67K。
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:423636
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19229
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈博,王圩,汪孝杰,等. 低阈值1.3μm InGaAsP/InP应变补偿多量子阱DFB激光器LP-MOCVD生长[J]. 半导体学报,1998,19(3):218.
APA 陈博.,王圩.,汪孝杰.,张静媛.,朱洪亮.,...&刘国利.(1998).低阈值1.3μm InGaAsP/InP应变补偿多量子阱DFB激光器LP-MOCVD生长.半导体学报,19(3),218.
MLA 陈博,et al."低阈值1.3μm InGaAsP/InP应变补偿多量子阱DFB激光器LP-MOCVD生长".半导体学报 19.3(1998):218.
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