CoSi2超薄外延膜的生长研究

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	CoSi2超薄外延膜的生长研究
	姚振钰; 张国炳; 秦复光; 刘志凯; 张建辉; 林兰英
	1998
Source Publication	半导体学报
Volume	19 Issue:3 Pages:221
metadata_83	中科院半导体所;北京大学微电子所
Subject Area	半导体材料
Funding Organization	国家八五计划
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:423637
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/19227
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	姚振钰,张国炳,秦复光,等. CoSi2超薄外延膜的生长研究[J]. 半导体学报,1998,19(3):221.
APA	姚振钰,张国炳,秦复光,刘志凯,张建辉,&林兰英.(1998).CoSi2超薄外延膜的生长研究.半导体学报,19(3),221.
MLA	姚振钰,et al."CoSi2超薄外延膜的生长研究".半导体学报 19.3(1998):221.

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