SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
CoSi2超薄外延膜的生长研究
姚振钰; 张国炳; 秦复光; 刘志凯; 张建辉; 林兰英
1998
Source Publication半导体学报
Volume19Issue:3Pages:221
metadata_83中科院半导体所;北京大学微电子所
Subject Area半导体材料
Funding Organization国家八五计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:423637
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19227
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
姚振钰,张国炳,秦复光,等. CoSi2超薄外延膜的生长研究[J]. 半导体学报,1998,19(3):221.
APA 姚振钰,张国炳,秦复光,刘志凯,张建辉,&林兰英.(1998).CoSi2超薄外延膜的生长研究.半导体学报,19(3),221.
MLA 姚振钰,et al."CoSi2超薄外延膜的生长研究".半导体学报 19.3(1998):221.
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