SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
AlGaAs/GaAs HEMT中界态对沟道层电场特性影响的二维数值研究
张兴宏; 杨玉芬; 王占国
1998
Source Publication半导体学报
Volume19Issue:3Pages:191
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:423655
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19215
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
张兴宏,杨玉芬,王占国. AlGaAs/GaAs HEMT中界态对沟道层电场特性影响的二维数值研究[J]. 半导体学报,1998,19(3):191.
APA 张兴宏,杨玉芬,&王占国.(1998).AlGaAs/GaAs HEMT中界态对沟道层电场特性影响的二维数值研究.半导体学报,19(3),191.
MLA 张兴宏,et al."AlGaAs/GaAs HEMT中界态对沟道层电场特性影响的二维数值研究".半导体学报 19.3(1998):191.
Files in This Item:
File Name/Size DocType Version Access License
5691.pdf(397KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[张兴宏]'s Articles
[杨玉芬]'s Articles
[王占国]'s Articles
Baidu academic
Similar articles in Baidu academic
[张兴宏]'s Articles
[杨玉芬]'s Articles
[王占国]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[张兴宏]'s Articles
[杨玉芬]'s Articles
[王占国]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.