AlGaAs/GaAs HEMT中界态对沟道层电场特性影响的二维数值研究

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	AlGaAs/GaAs HEMT中界态对沟道层电场特性影响的二维数值研究
	张兴宏; 杨玉芬; 王占国
	1998
Source Publication	半导体学报
Volume	19 Issue:3 Pages:191
metadata_83	中科院半导体所
Subject Area	半导体材料
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:423655
Date Available	2010-11-23
Citation statistics	Cited Times:1[CSCD] [CSCD Record]
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/19215
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	张兴宏,杨玉芬,王占国. AlGaAs/GaAs HEMT中界态对沟道层电场特性影响的二维数值研究[J]. 半导体学报,1998,19(3):191.
APA	张兴宏,杨玉芬,&王占国.(1998).AlGaAs/GaAs HEMT中界态对沟道层电场特性影响的二维数值研究.半导体学报,19(3),191.
MLA	张兴宏,et al."AlGaAs/GaAs HEMT中界态对沟道层电场特性影响的二维数值研究".半导体学报 19.3(1998):191.

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