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AlGaAs/GaAs HEMT中界态对沟道层电场特性影响的二维数值研究 | |
张兴宏; 杨玉芬; 王占国 | |
1998 | |
Source Publication | 半导体学报
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Volume | 19Issue:3Pages:191 |
metadata_83 | 中科院半导体所 |
Subject Area | 半导体材料 |
Indexed By | CSCD |
Language | 中文 |
CSCD ID | CSCD:423655 |
Date Available | 2010-11-23 |
Citation statistics |
Cited Times:1[CSCD]
[CSCD Record]
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Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/19215 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 张兴宏,杨玉芬,王占国. AlGaAs/GaAs HEMT中界态对沟道层电场特性影响的二维数值研究[J]. 半导体学报,1998,19(3):191. |
APA | 张兴宏,杨玉芬,&王占国.(1998).AlGaAs/GaAs HEMT中界态对沟道层电场特性影响的二维数值研究.半导体学报,19(3),191. |
MLA | 张兴宏,et al."AlGaAs/GaAs HEMT中界态对沟道层电场特性影响的二维数值研究".半导体学报 19.3(1998):191. |
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