Suructural investigation of InGaAs/InP quantum wire array using triple-axis X-ray diffractometry

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Suructural investigation of InGaAs/InP quantum wire array using triple-axis X-ray diffractometry
	Ma WQ(马文全); Wang YT(王玉田); Zhuang Y(庄岩); Jiang DS(江德生); Zhu HL(朱洪亮); Zhang JY(张静媛); Duan LH(段俐宏); Wang W(王圩)
	1998
Source Publication	半导体学报
Volume	19 Issue:1 Pages:61
metadata_83	中科院半导体所
Subject Area	光电子学
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:423656
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/19213
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	Ma WQ,Wang YT,Zhuang Y,et al. Suructural investigation of InGaAs/InP quantum wire array using triple-axis X-ray diffractometry[J]. 半导体学报,1998,19(1):61.
APA	马文全.,王玉田.,庄岩.,江德生.,朱洪亮.,...&王圩.(1998).Suructural investigation of InGaAs/InP quantum wire array using triple-axis X-ray diffractometry.半导体学报,19(1),61.
MLA	马文全,et al."Suructural investigation of InGaAs/InP quantum wire array using triple-axis X-ray diffractometry".半导体学报 19.1(1998):61.

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