SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InGaAs/InAlAs多量子阱电吸收光调制器
王健华; 金峰; 俞谦; 孙可; 李德杰; 蔡丽红; 黄绮; 周钧铭; 王玉田; 庄岩
1998
Source Publication半导体学报
Volume19Issue:1Pages:43
Abstract用国产MBE设备生长出与InP衬底晶格匹配的InGaAs/InAlAs多量子阱材料,并对材料的量子限制Stark效应及其与光偏振方向有关的各向异性电吸收特性进行研究。用该种材料制作的脊波导结构电吸收调制器在2.4V驱动电压下实现了20dB以上消光比,光3dB带宽达3GHz。
metadata_83清华大学电子工程系;中科院物理所;中科院半导体所
Subject Area光电子学
Funding Organization国家863计划,国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:423677
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19207
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王健华,金峰,俞谦,等. InGaAs/InAlAs多量子阱电吸收光调制器[J]. 半导体学报,1998,19(1):43.
APA 王健华.,金峰.,俞谦.,孙可.,李德杰.,...&庄岩.(1998).InGaAs/InAlAs多量子阱电吸收光调制器.半导体学报,19(1),43.
MLA 王健华,et al."InGaAs/InAlAs多量子阱电吸收光调制器".半导体学报 19.1(1998):43.
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