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GaN压电效应对载流子浓度的影响
张剑平; 王晓亮; 孙殿照; 李晓兵; 傅荣辉; 孔梅影
1998
Source Publication半导体学报
Volume19Issue:7Pages:498
Abstract在NH_3源GSMBE生长的GaN中观察到较大的双轴张应变。随着张应变的增加光致发光谱带边峰展宽,Hall测试得到的背景电子浓度增大。该文应用GaN的压电效应对此进行了解释。
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:423696
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19199
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
张剑平,王晓亮,孙殿照,等. GaN压电效应对载流子浓度的影响[J]. 半导体学报,1998,19(7):498.
APA 张剑平,王晓亮,孙殿照,李晓兵,傅荣辉,&孔梅影.(1998).GaN压电效应对载流子浓度的影响.半导体学报,19(7),498.
MLA 张剑平,et al."GaN压电效应对载流子浓度的影响".半导体学报 19.7(1998):498.
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