SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InGaAs/GaAs/InGaP Strained quantum well lasers grown by metalorganic chemical vapor deposition
Yang GW(杨国文); Xu ZT(徐遵图); Ma XY(马晓宇); Xu JY(徐俊英); Zhang JM(张敬明); Chen LH(陈良惠)
1998
Source Publication半导体学报
Volume19Issue:7Pages:548
metadata_83中科院半导体所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:423705
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19197
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Yang GW,Xu ZT,Ma XY,et al. InGaAs/GaAs/InGaP Strained quantum well lasers grown by metalorganic chemical vapor deposition[J]. 半导体学报,1998,19(7):548.
APA 杨国文,徐遵图,马晓宇,徐俊英,张敬明,&陈良惠.(1998).InGaAs/GaAs/InGaP Strained quantum well lasers grown by metalorganic chemical vapor deposition.半导体学报,19(7),548.
MLA 杨国文,et al."InGaAs/GaAs/InGaP Strained quantum well lasers grown by metalorganic chemical vapor deposition".半导体学报 19.7(1998):548.
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