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在Si(111)上外延生长硅化钴薄膜的SEM和XPS研究
吴正龙; 姚振钰; 张建辉; 刘志凯; 秦复光
1998
Source Publication北京师范大学学报. 自然科学版
Volume34Issue:4Pages:492
metadata_83北京师范大学分析测试中心;中科院半导体所
Subject Area半导体材料
Funding Organization国家八五计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:424830
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19195
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
吴正龙,姚振钰,张建辉,等. 在Si(111)上外延生长硅化钴薄膜的SEM和XPS研究[J]. 北京师范大学学报. 自然科学版,1998,34(4):492.
APA 吴正龙,姚振钰,张建辉,刘志凯,&秦复光.(1998).在Si(111)上外延生长硅化钴薄膜的SEM和XPS研究.北京师范大学学报. 自然科学版,34(4),492.
MLA 吴正龙,et al."在Si(111)上外延生长硅化钴薄膜的SEM和XPS研究".北京师范大学学报. 自然科学版 34.4(1998):492.
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