SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
SiC单晶的生长及其器件研制进展
王引书; 李晋闽; 林兰英
1998
Source Publication材料研究学报
Volume12Issue:3Pages:233
AbstractSiC具有禁带宽度大、热导率高、电子的饱和漂移速度大、临界击穿电场高和介电常数低等物点。在高频、大功率、耐高温、抗辐照的半导体器件及紫外探测器和短波发光二极管等方面具有广泛的应用前景。该文综述了半导体SiC单晶和薄膜的生长及其器件研制的概况。
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:426222
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19191
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王引书,李晋闽,林兰英. SiC单晶的生长及其器件研制进展[J]. 材料研究学报,1998,12(3):233.
APA 王引书,李晋闽,&林兰英.(1998).SiC单晶的生长及其器件研制进展.材料研究学报,12(3),233.
MLA 王引书,et al."SiC单晶的生长及其器件研制进展".材料研究学报 12.3(1998):233.
Files in This Item:
File Name/Size DocType Version Access License
5679.pdf(264KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[王引书]'s Articles
[李晋闽]'s Articles
[林兰英]'s Articles
Baidu academic
Similar articles in Baidu academic
[王引书]'s Articles
[李晋闽]'s Articles
[林兰英]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[王引书]'s Articles
[李晋闽]'s Articles
[林兰英]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.