SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
低温和高压条件对GaAs/AlAs弱耦合超晶格电场畴形成的影响
刘振兴; 孙宝权; 江德生
1998
Source Publication低温与超导
Volume26Issue:3Pages:23
metadata_83中科院物理所;中科院半导体所
Subject Area半导体物理
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:427546
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19187
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘振兴,孙宝权,江德生. 低温和高压条件对GaAs/AlAs弱耦合超晶格电场畴形成的影响[J]. 低温与超导,1998,26(3):23.
APA 刘振兴,孙宝权,&江德生.(1998).低温和高压条件对GaAs/AlAs弱耦合超晶格电场畴形成的影响.低温与超导,26(3),23.
MLA 刘振兴,et al."低温和高压条件对GaAs/AlAs弱耦合超晶格电场畴形成的影响".低温与超导 26.3(1998):23.
Files in This Item:
File Name/Size DocType Version Access License
5677.pdf(349KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[刘振兴]'s Articles
[孙宝权]'s Articles
[江德生]'s Articles
Baidu academic
Similar articles in Baidu academic
[刘振兴]'s Articles
[孙宝权]'s Articles
[江德生]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[刘振兴]'s Articles
[孙宝权]'s Articles
[江德生]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.