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半导体ZnTe/GaAs界面层错的高分辨显微分析
韩培德
1998
Source Publication电子显微学报
Volume17Issue:2Pages:166
Abstract该项研究对经热壁外延(HWE)生长在GaAs基底上的ZnTe进行高分辨显微结构的观察。在ZnT/GaAs界面上不仅存在着混合型全位错的扩展,而且首次发现类似螺旋位错分解的层错,并将其归结为原子在不全位错之后的堆积。
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:430866
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19185
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
韩培德. 半导体ZnTe/GaAs界面层错的高分辨显微分析[J]. 电子显微学报,1998,17(2):166.
APA 韩培德.(1998).半导体ZnTe/GaAs界面层错的高分辨显微分析.电子显微学报,17(2),166.
MLA 韩培德."半导体ZnTe/GaAs界面层错的高分辨显微分析".电子显微学报 17.2(1998):166.
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