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GS-MBE生长的GaP/Si的XPS研究
吴正龙; 余金中; 成步文; 于卓; 李晓文; 王启明
1998
Source Publication发光学报
Volume19Issue:2Pages:109
Abstract利用X射线光电子能谱(XPS)深度剖析方法对气体源分子束外延(GS-MBE)生长的GaP/Si异质结构进行了详细的分析。其结果表明
metadata_83北京师范大学分析测试中心;中科院半导体所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:432437
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19179
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
吴正龙,余金中,成步文,等. GS-MBE生长的GaP/Si的XPS研究[J]. 发光学报,1998,19(2):109.
APA 吴正龙,余金中,成步文,于卓,李晓文,&王启明.(1998).GS-MBE生长的GaP/Si的XPS研究.发光学报,19(2),109.
MLA 吴正龙,et al."GS-MBE生长的GaP/Si的XPS研究".发光学报 19.2(1998):109.
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