SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
高纯氮化镓外延材料的制备
刘祥林; 王晓晖; 汪度; 汪连山; 王成新; 韩培德; 陆大成; 林兰英
1998
Source Publication高技术通讯
Volume8Issue:8Pages:35
Abstract用MOVPE方法在蓝宝石衬底上生长了高纯氮化镓(GaN)外延材料。未掺杂GaN显n型, 室温下(300K)背景电子浓度为1.6×10~1~7cm~-~3,电子迁移率为360cm~2/V.s。在195K附近电子迁移率达到峰值, 为490cm~2/V.s。发现了该材料中存在深施主能级, 其离化能约为38meV。
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:435879
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19171
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘祥林,王晓晖,汪度,等. 高纯氮化镓外延材料的制备[J]. 高技术通讯,1998,8(8):35.
APA 刘祥林.,王晓晖.,汪度.,汪连山.,王成新.,...&林兰英.(1998).高纯氮化镓外延材料的制备.高技术通讯,8(8),35.
MLA 刘祥林,et al."高纯氮化镓外延材料的制备".高技术通讯 8.8(1998):35.
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