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半导体SiC材料的外延生长
王引书; 李晋闽; 林兰英
1998
Source Publication高技术通讯
Volume8Issue:7Pages:59
AbstractSiC具有禁带宽度大、热导率高、电子的饱和漂移速度大、临界击穿电场高和介电常数低等特点, 在高频、大功率、耐高温、抗辐照的半导体器件及紫外探测器和短波发光二极管等方面具有广泛的应用前景。本文简要介绍SiC半导体材料的液相外延、化学气相和分子束外延生长的概况及生长过程中杂质的控制。
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:435951
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19165
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王引书,李晋闽,林兰英. 半导体SiC材料的外延生长[J]. 高技术通讯,1998,8(7):59.
APA 王引书,李晋闽,&林兰英.(1998).半导体SiC材料的外延生长.高技术通讯,8(7),59.
MLA 王引书,et al."半导体SiC材料的外延生长".高技术通讯 8.7(1998):59.
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