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铒、氧共注a-Si:H和a-SiCx:H的1.54μm光致发光
薛俊明; 周伟; 孙钟林
1998
Source Publication光电子·激光
Volume9Issue:4Pages:301
Abstract在a-Si:H和a-SiCx:H中共注稀土铒和氧。300 ℃和400 ℃热退火后,测得了来自发光中心Er~(3+)内层4f电子跃迁的1.54 μm光致发光。400 ℃是较好的退火温度。随着碳含量的增加,发光强度逐渐减弱,这可能是由于碳的引入减弱了间隙氧退火时的迁移能力所致。
metadata_83南开大学光电子所;中科院半导体所
Subject Area半导体材料
Funding Organization材料科学与工程重点实验室基金,光学信息技术科学开放实验室基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:437481
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19157
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
薛俊明,周伟,孙钟林. 铒、氧共注a-Si:H和a-SiCx:H的1.54μm光致发光[J]. 光电子·激光,1998,9(4):301.
APA 薛俊明,周伟,&孙钟林.(1998).铒、氧共注a-Si:H和a-SiCx:H的1.54μm光致发光.光电子·激光,9(4),301.
MLA 薛俊明,et al."铒、氧共注a-Si:H和a-SiCx:H的1.54μm光致发光".光电子·激光 9.4(1998):301.
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