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InGaAs/GaAs垂直对准量子点超晶格的正入射红外吸收
庄乾东; 李晋闽; 曾一平; 潘量; 孔梅影; 林兰英
1998
Source Publication红外与毫米波学报
Volume17Issue:6Pages:477
Abstract利用分子束外延技术,生长了30周期的InGaAs/GaAs量子点超晶格。透射电镜表明各层量子点沿生长方向呈现很好的垂直对准。红外吸收测试观察到明显的垂直入射红外吸收,吸收范围在8.5 μm~10.4 μm之间,峰值波长为9.9 μm,第一次实现了响应8 μm~12 μm大气窗口的量子点的垂直入射红外吸收,这一结果预示了量子点超晶格结构在红外探测领域的潜在应用。
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization中科院半导体所所长基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:441471
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19141
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
庄乾东,李晋闽,曾一平,等. InGaAs/GaAs垂直对准量子点超晶格的正入射红外吸收[J]. 红外与毫米波学报,1998,17(6):477.
APA 庄乾东,李晋闽,曾一平,潘量,孔梅影,&林兰英.(1998).InGaAs/GaAs垂直对准量子点超晶格的正入射红外吸收.红外与毫米波学报,17(6),477.
MLA 庄乾东,et al."InGaAs/GaAs垂直对准量子点超晶格的正入射红外吸收".红外与毫米波学报 17.6(1998):477.
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