SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
表面化学分子吸附增强多孔硅发光效率
尹峰; 李学萍; 肖绪瑞; 张宝文; 曹怡; 李国华; 韩和相; 汪兆平
1998
Source Publication科学通报
Volume43Issue:3Pages:333
Abstract报道了HNO_3氧化的多孔硅表面吸附9-氰基蒽(9-CA)分子后的发光增强现象。
metadata_83中科院感光化学所;中科院半导体所
Subject Area半导体化学
Funding Organization国家自然科学基金,光化学开放实验室基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:449090
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19137
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
尹峰,李学萍,肖绪瑞,等. 表面化学分子吸附增强多孔硅发光效率[J]. 科学通报,1998,43(3):333.
APA 尹峰.,李学萍.,肖绪瑞.,张宝文.,曹怡.,...&汪兆平.(1998).表面化学分子吸附增强多孔硅发光效率.科学通报,43(3),333.
MLA 尹峰,et al."表面化学分子吸附增强多孔硅发光效率".科学通报 43.3(1998):333.
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