SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
RTCVD工艺制备poly-Si薄膜太阳电池的研究
赵玉文; 李仲明; 何少琪; 王文静; 寥显伯; 盛殊然; 邓礼生; 潘广勤
1998
Source Publication太阳能学报
Volume19Issue:2Pages:152
Abstract报道了快速热化学气相沉积(RTCVD)工艺制备多晶硅(poly -Si)薄膜及电池的实验和结果。采用SiH_2Co_2作为原料气体,衬底温度为1030℃时,薄膜的生长速率为10nm/s。发现薄膜的平均晶粒度及载流子迁移率与衬底温度和材料有关。用该薄膜在未抛光重掺杂磷的硅衬底上制备1cm~2的p~+n结样品电池,无减反射涂层,其转换效率为4.54%(AM1.5,100mW/cm~2,25℃)。
metadata_83北京市太阳能所;中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:462214
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19129
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
赵玉文,李仲明,何少琪,等. RTCVD工艺制备poly-Si薄膜太阳电池的研究[J]. 太阳能学报,1998,19(2):152.
APA 赵玉文.,李仲明.,何少琪.,王文静.,寥显伯.,...&潘广勤.(1998).RTCVD工艺制备poly-Si薄膜太阳电池的研究.太阳能学报,19(2),152.
MLA 赵玉文,et al."RTCVD工艺制备poly-Si薄膜太阳电池的研究".太阳能学报 19.2(1998):152.
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