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多量子阱自电光效应器件及其负阻特性
陈弘达; 张以谟; 郭维廉; 吴荣汉; 高文智; 陈志标; 杜云
1998
Source Publication天津大学学报
Volume31Issue:2Pages:211
Abstract研究了GaAs/AlGaAs多量子阱结构的电场光调制特性,测量了光反射谱、光电流谱和光电流电压特性。结果表明,在I-V特性中存在光电流负微分电阻区。由这种多量子阱材料制备的自电效应器件(SEED)观察到明显的量子限制Stark效应。
metadata_83天津大学精密仪器与光电子工程学院;中科院半导体所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:462458
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19127
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈弘达,张以谟,郭维廉,等. 多量子阱自电光效应器件及其负阻特性[J]. 天津大学学报,1998,31(2):211.
APA 陈弘达.,张以谟.,郭维廉.,吴荣汉.,高文智.,...&杜云.(1998).多量子阱自电光效应器件及其负阻特性.天津大学学报,31(2),211.
MLA 陈弘达,et al."多量子阱自电光效应器件及其负阻特性".天津大学学报 31.2(1998):211.
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