SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
非晶硅薄膜的光膨胀效应
孔光临
1998
Source Publication物理
Volume27Issue:5Pages:257
Abstract利用“差分电容膨胀计”方法,首次发现氢化非晶硅(a-Si:H)在光照下体积增大。著名的Staebler-Wronski效应(a-Si:H的光致亚稳变化)很可能是这种“光膨胀”的后效应。
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:465400
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19117
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
孔光临. 非晶硅薄膜的光膨胀效应[J]. 物理,1998,27(5):257.
APA 孔光临.(1998).非晶硅薄膜的光膨胀效应.物理,27(5),257.
MLA 孔光临."非晶硅薄膜的光膨胀效应".物理 27.5(1998):257.
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