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赝配GaAs/In_(0.2)Ga_(0.8)As量子阱导带不连续量的C-V和电容瞬态测量
卢励吾; 张砚华; 杨国文; 王占国; Wang J; Wang Y; Ge Weikun
1998
Source Publication物理学报
Volume47Issue:8Pages:1339
metadata_83中科院半导体所;香港科技大学物理系
Subject Area半导体材料
Funding Organization半导体材料开放实验室基金,国家自然科学基金
Indexed ByCSCD
Language英语
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19113
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
卢励吾,张砚华,杨国文,等. 赝配GaAs/In_(0.2)Ga_(0.8)As量子阱导带不连续量的C-V和电容瞬态测量[J]. 物理学报,1998,47(8):1339.
APA 卢励吾.,张砚华.,杨国文.,王占国.,Wang J.,...&Ge Weikun.(1998).赝配GaAs/In_(0.2)Ga_(0.8)As量子阱导带不连续量的C-V和电容瞬态测量.物理学报,47(8),1339.
MLA 卢励吾,et al."赝配GaAs/In_(0.2)Ga_(0.8)As量子阱导带不连续量的C-V和电容瞬态测量".物理学报 47.8(1998):1339.
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