SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
掺铒硅发光的晶场分裂
雷红兵; 杨沁清; 王启明
1998
Source Publication物理学报
Volume47Issue:7Pages:1201
Abstract测量了掺铒硅的高分辨光致发光光谱,得到9条铒发光分裂谱线。利用群对称理论指出9条谱线来自Er~(3+)中~4I_(13/2)到~4I_(15/2)光跃迁在T_d晶场下的分裂。Er~(3+)的第一激发态~4E_(13/2)最低能量的两个Stark能级为Γ_8,Γ_6(能量递增),它们到基态~4I_(15/2)相应晶场Stark能级的允许辐射跃迁为9条谱线。硅
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:465735
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19109
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
雷红兵,杨沁清,王启明. 掺铒硅发光的晶场分裂[J]. 物理学报,1998,47(7):1201.
APA 雷红兵,杨沁清,&王启明.(1998).掺铒硅发光的晶场分裂.物理学报,47(7),1201.
MLA 雷红兵,et al."掺铒硅发光的晶场分裂".物理学报 47.7(1998):1201.
Files in This Item:
File Name/Size DocType Version Access License
5638.pdf(309KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[雷红兵]'s Articles
[杨沁清]'s Articles
[王启明]'s Articles
Baidu academic
Similar articles in Baidu academic
[雷红兵]'s Articles
[杨沁清]'s Articles
[王启明]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[雷红兵]'s Articles
[杨沁清]'s Articles
[王启明]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.