SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
纳米硅薄膜的光致发光特性
刘明; 何宇亮; 江兴流; 李国华; 韩和相
1998
Source Publication物理学报
Volume47Issue:5Pages:864
Abstract用等离子体增强化学汽相淀积法系统制备了发光纳米硅(nc-Si:H)薄膜。讨论了晶粒尺寸和表面结构对光致发光(PL)谱的影响。用量子限制-发光中心模型解释了nc-Si:H的PL。研究了PL谱的温度特性。温度从10K上升到250K,PL峰值红移了54meV,且PL强度衰减了两个数量级。
metadata_83北京航空航天大学应用物理系;中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:465757
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19107
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘明,何宇亮,江兴流,等. 纳米硅薄膜的光致发光特性[J]. 物理学报,1998,47(5):864.
APA 刘明,何宇亮,江兴流,李国华,&韩和相.(1998).纳米硅薄膜的光致发光特性.物理学报,47(5),864.
MLA 刘明,et al."纳米硅薄膜的光致发光特性".物理学报 47.5(1998):864.
Files in This Item:
File Name/Size DocType Version Access License
5637.pdf(349KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[刘明]'s Articles
[何宇亮]'s Articles
[江兴流]'s Articles
Baidu academic
Similar articles in Baidu academic
[刘明]'s Articles
[何宇亮]'s Articles
[江兴流]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[刘明]'s Articles
[何宇亮]'s Articles
[江兴流]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.