SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
1.3μm低阈值InGaAsP/InP应变补偿MQW激光器的LP-MOCVD生长
陈博; 王圩; 汪孝杰; 张静媛; 周帆; 马朝华
1998
Source Publication中国激光
Volume25Issue:9Pages:785
Abstract报道了用低压金属有机物化学气相淀积(LP-MOCVD)方法外延生长InGaAsP/InP应变补偿多量子阱结构。用此材料制备的掩埋异质结(BH)条形结构多量子阱激光器具有极低阈值电流4~6mA。20~40℃时特征温度T_0高达67K,室温下外量子效率为0.3mW/mA。
metadata_83中科院半导体所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:475466
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19083
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈博,王圩,汪孝杰,等. 1.3μm低阈值InGaAsP/InP应变补偿MQW激光器的LP-MOCVD生长[J]. 中国激光,1998,25(9):785.
APA 陈博,王圩,汪孝杰,张静媛,周帆,&马朝华.(1998).1.3μm低阈值InGaAsP/InP应变补偿MQW激光器的LP-MOCVD生长.中国激光,25(9),785.
MLA 陈博,et al."1.3μm低阈值InGaAsP/InP应变补偿MQW激光器的LP-MOCVD生长".中国激光 25.9(1998):785.
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