SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Al_2O_3/Si(001)衬底上GaN外延薄膜的制备
汪连山; 刘祥林; 昝育德; 汪度; 王俊; 陆大成; 王占国
1998
Source Publication中国科学. E辑,技术科学
Volume28Issue:1Pages:32
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家863计划,国家八五计划
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19067
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
汪连山,刘祥林,昝育德,等. Al_2O_3/Si(001)衬底上GaN外延薄膜的制备[J]. 中国科学. E辑,技术科学,1998,28(1):32.
APA 汪连山.,刘祥林.,昝育德.,汪度.,王俊.,...&王占国.(1998).Al_2O_3/Si(001)衬底上GaN外延薄膜的制备.中国科学. E辑,技术科学,28(1),32.
MLA 汪连山,et al."Al_2O_3/Si(001)衬底上GaN外延薄膜的制备".中国科学. E辑,技术科学 28.1(1998):32.
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