SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
新型器件及其超薄层异质外延材料和表面、界面研究
王占国; 陈维德
1998
Source Publication中国科学基金
Volume12Issue:4Pages:261
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:476428
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19065
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王占国,陈维德. 新型器件及其超薄层异质外延材料和表面、界面研究[J]. 中国科学基金,1998,12(4):261.
APA 王占国,&陈维德.(1998).新型器件及其超薄层异质外延材料和表面、界面研究.中国科学基金,12(4),261.
MLA 王占国,et al."新型器件及其超薄层异质外延材料和表面、界面研究".中国科学基金 12.4(1998):261.
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