SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
掺铒富硅氧化硅薄膜的光致发光
雷红兵; 杨沁清; 朱家廉; 王红杰; 高俊华; 王启明
1999
Source Publication半导体学报
Volume20Issue:1Pages:67
Abstract该文研究了富硅氧化硅薄膜掺入铒的发光特性。富硅氧化硅薄膜(氧含量为60%)采用PECVD方法生长,室温下离子注入铒,经过800℃,5min的退火,在10-~300K温度下得到较强的波长1.54μm光致发光。发光强度随温度升高下降,其温度猝灭激活能为14.3meV。发光谱表明富硅氧化硅中Er-O发光中心仍具有T_d对称性。
metadata_83中科院半导体所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:490820
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19053
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
雷红兵,杨沁清,朱家廉,等. 掺铒富硅氧化硅薄膜的光致发光[J]. 半导体学报,1999,20(1):67.
APA 雷红兵,杨沁清,朱家廉,王红杰,高俊华,&王启明.(1999).掺铒富硅氧化硅薄膜的光致发光.半导体学报,20(1),67.
MLA 雷红兵,et al."掺铒富硅氧化硅薄膜的光致发光".半导体学报 20.1(1999):67.
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