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氢化非晶氧化硅薄膜光致发光起源的探讨
马智训; 廖显伯; 何杰; 程文超; 岳国珍; 王永谦; 刁宏伟; 孔光临
1999
Source Publication半导体学报
Volume20Issue:2Pages:162
Abstract研究了不同氧含量的a-SiO_x:H薄膜的室温光致发光,发现每一个样品的发光谱均由两个Gaussian分谱组成。一个是峰位随氧含量蓝移的宽的主峰;另一个是峰位固定在大约835nm的伴峰。结合对IR谱和微区Raman谱的分析,认为主峰可能与膜中的a-Si颗粒有关,而伴峰与Si过剩或氧欠缺引起的缺陷有关。
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:490836
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19051
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
马智训,廖显伯,何杰,等. 氢化非晶氧化硅薄膜光致发光起源的探讨[J]. 半导体学报,1999,20(2):162.
APA 马智训.,廖显伯.,何杰.,程文超.,岳国珍.,...&孔光临.(1999).氢化非晶氧化硅薄膜光致发光起源的探讨.半导体学报,20(2),162.
MLA 马智训,et al."氢化非晶氧化硅薄膜光致发光起源的探讨".半导体学报 20.2(1999):162.
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