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Comparison of GexSi1—x Grown by UHV/CVD from Si2H6/GeH4 and SiH4/GeH4
李代宗; 于卓; 成步文; 黄昌俊; 雷震霖; 余金中; 王启明
1999
Source PublicationSemiconductor Photonics and Technology
Volume5Issue:3Pages:134
metadata_83中科院半导体所
Subject Area光电子学
Funding Organization国家自然科学基金
Indexed ByCSCD
Language英语
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19039
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
李代宗,于卓,成步文,等. Comparison of GexSi1—x Grown by UHV/CVD from Si2H6/GeH4 and SiH4/GeH4[J]. Semiconductor Photonics and Technology,1999,5(3):134.
APA 李代宗.,于卓.,成步文.,黄昌俊.,雷震霖.,...&王启明.(1999).Comparison of GexSi1—x Grown by UHV/CVD from Si2H6/GeH4 and SiH4/GeH4.Semiconductor Photonics and Technology,5(3),134.
MLA 李代宗,et al."Comparison of GexSi1—x Grown by UHV/CVD from Si2H6/GeH4 and SiH4/GeH4".Semiconductor Photonics and Technology 5.3(1999):134.
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