SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
High power 980 nm InGaAs/AlGaAs strained quantum well lasers
Yin Tao; Du Jinyu; Lian Peng; Xu Zuntu; Chen Changhua; Guo Weiling; Liu Ying; Li Shuang; Gao Guo; Zou Deshu; Chen Jianxin; Shen Guangdi; Ma Xiaoyu; Chen Lianghui
1999
Source PublicationChinese Journal of Lasers
Volume8Issue:5Pages:397
metadata_83北京工业大学电子工程系;中科院半导体所
Subject Area半导体器件
Funding Organization国家自然科学基金,北京市自然科学基金
Indexed ByCSCD
Language英语
CSCD IDCSCD:500231
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19035
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Yin Tao,Du Jinyu,Lian Peng,et al. High power 980 nm InGaAs/AlGaAs strained quantum well lasers[J]. Chinese Journal of Lasers,1999,8(5):397.
APA Yin Tao.,Du Jinyu.,Lian Peng.,Xu Zuntu.,Chen Changhua.,...&Chen Lianghui.(1999).High power 980 nm InGaAs/AlGaAs strained quantum well lasers.Chinese Journal of Lasers,8(5),397.
MLA Yin Tao,et al."High power 980 nm InGaAs/AlGaAs strained quantum well lasers".Chinese Journal of Lasers 8.5(1999):397.
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