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Highly conductive nb-doped BaTiO3 epitaxial thin films grown by laser molecular beam epitaxy
Yan Lei; Lu Huibin; Chen Zhenghao; Dai Shouyu; Tan Guotai; Yang Guozhen
2001
Source PublicationChinese Physics Letters
Volume18Issue:11Pages:1513
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language英语
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19023
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Yan Lei,Lu Huibin,Chen Zhenghao,et al. Highly conductive nb-doped BaTiO3 epitaxial thin films grown by laser molecular beam epitaxy[J]. Chinese Physics Letters,2001,18(11):1513.
APA Yan Lei,Lu Huibin,Chen Zhenghao,Dai Shouyu,Tan Guotai,&Yang Guozhen.(2001).Highly conductive nb-doped BaTiO3 epitaxial thin films grown by laser molecular beam epitaxy.Chinese Physics Letters,18(11),1513.
MLA Yan Lei,et al."Highly conductive nb-doped BaTiO3 epitaxial thin films grown by laser molecular beam epitaxy".Chinese Physics Letters 18.11(2001):1513.
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