SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Si_(1-x)Ge_x/Si低维应变材料的发光机理
韩伟华; 余金中
1999
Source Publication半导体光电
Volume20Issue:6Pages:32
metadata_83中科院半导体所
Subject Area光电子学
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:531784
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18993
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
韩伟华,余金中. Si_(1-x)Ge_x/Si低维应变材料的发光机理[J]. 半导体光电,1999,20(6):32.
APA 韩伟华,&余金中.(1999).Si_(1-x)Ge_x/Si低维应变材料的发光机理.半导体光电,20(6),32.
MLA 韩伟华,et al."Si_(1-x)Ge_x/Si低维应变材料的发光机理".半导体光电 20.6(1999):32.
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