SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
质子注入平面掩埋条形高频DFB激光器
刘国利; 张佰君; 朱洪亮; 张静媛; 汪孝杰; 王圩
2000
Source Publication半导体光电
Volume21Issue:4Pages:245
Abstract报道了采用质子注入制作平面掩埋条形高频DFB激光器。质子注入提高了限制层对电流的限制作用,并减小了限制层的寄生电容;DFB激光器的斜率效率由注入前的0.147mW/mA提高到0.216mW/mA;电容测试结果表明
metadata_83中科院半导体所国家光电子工艺中心
Subject Area半导体器件
Funding Organization国家自然科学基金,国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:531861
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18985
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘国利,张佰君,朱洪亮,等. 质子注入平面掩埋条形高频DFB激光器[J]. 半导体光电,2000,21(4):245.
APA 刘国利,张佰君,朱洪亮,张静媛,汪孝杰,&王圩.(2000).质子注入平面掩埋条形高频DFB激光器.半导体光电,21(4),245.
MLA 刘国利,et al."质子注入平面掩埋条形高频DFB激光器".半导体光电 21.4(2000):245.
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