SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
硅片接触表面的弹性形变范围
韩伟华; 余金中
2001
Source Publication半导体光电
Volume22Issue:6Pages:440
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家973计划,国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:532033
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18975
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
韩伟华,余金中. 硅片接触表面的弹性形变范围[J]. 半导体光电,2001,22(6):440.
APA 韩伟华,&余金中.(2001).硅片接触表面的弹性形变范围.半导体光电,22(6),440.
MLA 韩伟华,et al."硅片接触表面的弹性形变范围".半导体光电 22.6(2001):440.
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