硅片接触表面的弹性形变范围

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	硅片接触表面的弹性形变范围
	韩伟华; 余金中
	2001
Source Publication	半导体光电
Volume	22 Issue:6 Pages:440
metadata_83	中科院半导体所
Subject Area	半导体材料
Funding Organization	国家973计划,国家自然科学基金
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:532033
Date Available	2010-11-23
Citation statistics	Cited Times:1[CSCD] [CSCD Record]
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/18975
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	韩伟华,余金中. 硅片接触表面的弹性形变范围[J]. 半导体光电,2001,22(6):440.
APA	韩伟华,&余金中.(2001).硅片接触表面的弹性形变范围.半导体光电,22(6),440.
MLA	韩伟华,et al."硅片接触表面的弹性形变范围".半导体光电 22.6(2001):440.

Related Services

Bookmark

Google Scholar

Similar articles in Bing Scholar

Terms of Use

No data!

Social Bookmark/Share

All comments (0)

No comment.

The comment function is only available to registered usersLog In

If you have any objections to this item, please fill out the form below and the administrator will contact you as soon as possible.
Content:
Email：	*
Institution:
Verification Code:	Refresh

Any comments and suggestions are welcomed.
Title:	*
Content:
Email：	*
Verification Code:	Refresh

中国科学院半导体研究所机构知识库