SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
SiGe/Si异质结构的x射线双晶衍射
邹德恕; 徐晨; 罗辑; 魏欢; 董欣; 周静; 杜金玉; 高国; 陈建新; 沈光地; 王玉田
2000
Source Publication半导体技术
Volume25Issue:1Pages:36
Abstract通过X射线双晶衍射图形讨论了SiGe/Si HBT的电学特性与晶格结构的关系。
metadata_83北京工业大学电子工程系;中科院半导体所
Subject Area半导体材料
Funding Organization北京市自然科学基金,国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:532148
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18973
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
邹德恕,徐晨,罗辑,等. SiGe/Si异质结构的x射线双晶衍射[J]. 半导体技术,2000,25(1):36.
APA 邹德恕.,徐晨.,罗辑.,魏欢.,董欣.,...&王玉田.(2000).SiGe/Si异质结构的x射线双晶衍射.半导体技术,25(1),36.
MLA 邹德恕,et al."SiGe/Si异质结构的x射线双晶衍射".半导体技术 25.1(2000):36.
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