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MBE生长高光功率转换效率InGaAs/GaAs/AlGaAs应变量子阱激光器
徐遵图; 杨国文; 徐俊英; 张敬明; 沈光地; 高国; 廉鹏; 陈良惠
1999
Source Publication半导体学报
Volume20Issue:3Pages:194
Abstract该文从理论上分析了实现InGaAs/GaAs/AlGaAs应变量子阱激光器高光功率转换效率、高输出功率的有效途径,并优化了器件结构,可以同时获得低的腔面光功率密度和小的垂直于结平面远场发散角。利用分子束外延生长构成了高质量InGaAs/GaAs/AlGaAs应变量子阱激光器,其最高光功率转换效率为53%、最大输出功率为3.7W,垂直于结平面方向远场发散角为30°。
metadata_83北京工业大学电子工程系;中科院半导体所国家光电子工艺中心
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:532462
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18965
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
徐遵图,杨国文,徐俊英,等. MBE生长高光功率转换效率InGaAs/GaAs/AlGaAs应变量子阱激光器[J]. 半导体学报,1999,20(3):194.
APA 徐遵图.,杨国文.,徐俊英.,张敬明.,沈光地.,...&陈良惠.(1999).MBE生长高光功率转换效率InGaAs/GaAs/AlGaAs应变量子阱激光器.半导体学报,20(3),194.
MLA 徐遵图,et al."MBE生长高光功率转换效率InGaAs/GaAs/AlGaAs应变量子阱激光器".半导体学报 20.3(1999):194.
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