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High Temperature1.3μm AlGaInAs/In PStrained Multiquantum Well Laser Grownby Metalorganic Vapor Phase Epitaxy
Chen B(陈博); Wang XJ(汪孝杰); Wang W(王圩)
1999
Source Publication半导体学报
Volume20Issue:3Pages:214
metadata_83中科院半导体所
Subject Area半导体器件
Funding Organization国家863计划
Indexed ByCSCD
Language英语
CSCD IDCSCD:532465
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18963
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Chen B,Wang XJ,Wang W. High Temperature1.3μm AlGaInAs/In PStrained Multiquantum Well Laser Grownby Metalorganic Vapor Phase Epitaxy[J]. 半导体学报,1999,20(3):214.
APA 陈博,汪孝杰,&王圩.(1999).High Temperature1.3μm AlGaInAs/In PStrained Multiquantum Well Laser Grownby Metalorganic Vapor Phase Epitaxy.半导体学报,20(3),214.
MLA 陈博,et al."High Temperature1.3μm AlGaInAs/In PStrained Multiquantum Well Laser Grownby Metalorganic Vapor Phase Epitaxy".半导体学报 20.3(1999):214.
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