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GaAs(001)衬底上MOCVD生长的立方相GaN外延薄膜的光学性质研究
孙小玲; 杨辉; 李国华; 郑联喜; 李建斌; 王玉田; 王占国
1999
Source Publication半导体学报
Volume20Issue:3Pages:225
metadata_83中科院半导体所
Subject Area光电子学
Funding Organization国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:532467
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18961
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
孙小玲,杨辉,李国华,等. GaAs(001)衬底上MOCVD生长的立方相GaN外延薄膜的光学性质研究[J]. 半导体学报,1999,20(3):225.
APA 孙小玲.,杨辉.,李国华.,郑联喜.,李建斌.,...&王占国.(1999).GaAs(001)衬底上MOCVD生长的立方相GaN外延薄膜的光学性质研究.半导体学报,20(3),225.
MLA 孙小玲,et al."GaAs(001)衬底上MOCVD生长的立方相GaN外延薄膜的光学性质研究".半导体学报 20.3(1999):225.
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