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GaAs(001)衬底上MOCVD生长的立方相GaN外延薄膜的光学性质研究 | |
孙小玲; 杨辉; 李国华; 郑联喜; 李建斌; 王玉田![]() | |
1999 | |
Source Publication | 半导体学报
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Volume | 20Issue:3Pages:225 |
metadata_83 | 中科院半导体所 |
Subject Area | 光电子学 |
Funding Organization | 国家863计划 |
Indexed By | CSCD |
Language | 中文 |
CSCD ID | CSCD:532467 |
Date Available | 2010-11-23 |
Citation statistics |
Cited Times:5[CSCD]
[CSCD Record]
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Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/18961 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 孙小玲,杨辉,李国华,等. GaAs(001)衬底上MOCVD生长的立方相GaN外延薄膜的光学性质研究[J]. 半导体学报,1999,20(3):225. |
APA | 孙小玲.,杨辉.,李国华.,郑联喜.,李建斌.,...&王占国.(1999).GaAs(001)衬底上MOCVD生长的立方相GaN外延薄膜的光学性质研究.半导体学报,20(3),225. |
MLA | 孙小玲,et al."GaAs(001)衬底上MOCVD生长的立方相GaN外延薄膜的光学性质研究".半导体学报 20.3(1999):225. |
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5528.pdf(263KB) | 限制开放 | -- | Application Full Text |
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