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InAlGaAs/GaAs量子阱的生长及其界面特性
郑联喜; 胡雄伟; 韩勤
1999
Source Publication半导体学报
Volume20Issue:4Pages:265
Abstract该文研究了以InAlGaAs作垒层的InAlGaAs/GaAs量子阱的低压金属有机化合物化学汽相淀积(LP-MOCVD)生长及其界面特性,发现在适当生长条件下可以解决InGaAs和AlGaAs在生长温度范围不兼容的问题,得到了高质量的InAlGaAs/GaAs量子阱材料。同时用X光和低温光致发光(PL)谱研究了量子阱结构的界面特性,表明适当的界面生长中断不仅可以改善界面平整度,而且能改善垒层InAlGaAs的质量。
metadata_83中科院半导体所国家光电子工艺中心
Subject Area光电子学
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:532475
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18955
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
郑联喜,胡雄伟,韩勤. InAlGaAs/GaAs量子阱的生长及其界面特性[J]. 半导体学报,1999,20(4):265.
APA 郑联喜,胡雄伟,&韩勤.(1999).InAlGaAs/GaAs量子阱的生长及其界面特性.半导体学报,20(4),265.
MLA 郑联喜,et al."InAlGaAs/GaAs量子阱的生长及其界面特性".半导体学报 20.4(1999):265.
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