SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InGaAs/AlGaAs应变量子阱激光器的可靠性
杨国文; 徐俊英; 徐遵图; 张敬明; 陈良惠
1999
Source Publication半导体学报
Volume20Issue:4Pages:278
Abstract利用分子束外延方法研制的InGaAs/AlGaAs应变量子阱激光器外延材料制备了窄条型脊型波导结构量子阱激光器件。通过对其50℃高温加速老化,检测了器件的可靠性,并对器件中存在的三种典型退化行为,即快速退化、慢退化和端面光学灾变损伤进行了分析与研究。
metadata_83中科院半导体所
Subject Area光电子学
Funding Organization国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:532478
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18953
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
杨国文,徐俊英,徐遵图,等. InGaAs/AlGaAs应变量子阱激光器的可靠性[J]. 半导体学报,1999,20(4):278.
APA 杨国文,徐俊英,徐遵图,张敬明,&陈良惠.(1999).InGaAs/AlGaAs应变量子阱激光器的可靠性.半导体学报,20(4),278.
MLA 杨国文,et al."InGaAs/AlGaAs应变量子阱激光器的可靠性".半导体学报 20.4(1999):278.
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