SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GSMBE外延生长GeSi/Sip-n异质结二极管
刘学锋; 王玉田; 刘金平; 李建平; 李灵霄; 孙殿照; 孔梅影; 林兰英
1999
Source Publication半导体学报
Volume20Issue:4Pages:287
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家九五计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:532480
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18951
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘学锋,王玉田,刘金平,等. GSMBE外延生长GeSi/Sip-n异质结二极管[J]. 半导体学报,1999,20(4):287.
APA 刘学锋.,王玉田.,刘金平.,李建平.,李灵霄.,...&林兰英.(1999).GSMBE外延生长GeSi/Sip-n异质结二极管.半导体学报,20(4),287.
MLA 刘学锋,et al."GSMBE外延生长GeSi/Sip-n异质结二极管".半导体学报 20.4(1999):287.
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