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可用于器件的侧墙GaAs量子线列阵结构
牛智川; 周增圻; 潘钟; 吴荣汉; Noetzel R; Ploog K
1999
Source Publication半导体学报
Volume20Issue:4Pages:309
Abstract该文介绍了一种可以实用的侧墙式GaAs量子线及其列阵结构。沿〔01-1〕方向腐蚀条形的(311)A衬底上,分子束外延生长的各向异性导致了侧墙量子线结构的形成。用光栅刻蚀方法,制备了横向周期为1μm、纵向三层叠加的三维侧墙量子线列阵。阴极荧光谱研究表明
metadata_83中科院半导体所国家光电子工艺中心;Paul Drude 固体电子学研究所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:532484
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18945
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
牛智川,周增圻,潘钟,等. 可用于器件的侧墙GaAs量子线列阵结构[J]. 半导体学报,1999,20(4):309.
APA 牛智川,周增圻,潘钟,吴荣汉,Noetzel R,&Ploog K.(1999).可用于器件的侧墙GaAs量子线列阵结构.半导体学报,20(4),309.
MLA 牛智川,et al."可用于器件的侧墙GaAs量子线列阵结构".半导体学报 20.4(1999):309.
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