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N型GaN的持续光电导
汪连山; 刘祥林; 岳国珍; 王晓晖; 汪度; 陆大成; 王占国
1999
Source Publication半导体学报
Volume20Issue:5Pages:371
Abstract该文报道了金属有机的化学气相外延(MOVPE)生长的未人为掺杂和掺Si n-GaN的持续光电导(Persistent Photoconductivity-PCC)。在不同温度下观察了光电导的产生和衰变行为。实验结果表明,未人为掺杂和掺Si n-GaN的持续光电导和黄光发射可能起源于深能级缺陷,这些缺陷可以是V_(Ga)空位、N_(Ga)反位或者V_(Ga)-Si_(Ga)络合物。和未人为掺杂样品A相比,样品B中因Si的并入导致GaN中的深能级缺陷增加,提高了GaN中黄光发射,使持续光电导衰变减慢,但实验未发现黄光的加强和光电导衰变特性与两样品生长温度有明显关系。随测量温度的增加,持续光电导衰变加快,衰变曲线能用扩展指数定律进行拟合。
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:532497
Date Available2010-11-23
Citation statistics
Cited Times:8[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18937
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
汪连山,刘祥林,岳国珍,等. N型GaN的持续光电导[J]. 半导体学报,1999,20(5):371.
APA 汪连山.,刘祥林.,岳国珍.,王晓晖.,汪度.,...&王占国.(1999).N型GaN的持续光电导.半导体学报,20(5),371.
MLA 汪连山,et al."N型GaN的持续光电导".半导体学报 20.5(1999):371.
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