SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
利用改进的固相外延技术改善CMOS/SOS器件的特性
刘忠立; 和致经; 于芳; 张永刚; 郁元桓
1999
Source Publication半导体学报
Volume20Issue:5Pages:433
AbstractCMOS/SOS器件同体硅CMOS器件相比,载流子迁移率较低,沟道漏电电流放大,它们主要是由异质外延硅膜缺陷,特别是靠近硅蓝宝石界面的硅膜缺陷造成的。该文描述一种改进的固相外延技术提高外延硅膜质量进而改善CMOS/SOS器件特性的实验结果。
metadata_83中科院半导体所
Subject Area半导体器件
Indexed ByCSCD
Language中文
CSCD IDCSCD:532509
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18927
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘忠立,和致经,于芳,等. 利用改进的固相外延技术改善CMOS/SOS器件的特性[J]. 半导体学报,1999,20(5):433.
APA 刘忠立,和致经,于芳,张永刚,&郁元桓.(1999).利用改进的固相外延技术改善CMOS/SOS器件的特性.半导体学报,20(5),433.
MLA 刘忠立,et al."利用改进的固相外延技术改善CMOS/SOS器件的特性".半导体学报 20.5(1999):433.
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