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Ramping热退火直拉重掺锑硅衬底片的增强氧沉淀
王启元; 王俊; 韩秀峰; 邓惠芳; 王建华; 昝育德; 蔡田海; 郁元桓; 林兰英
1999
Source Publication半导体学报
Volume20Issue:6Pages:458
Abstract该文报道了一种改进本征吸杂技术--低温短时热退火工艺,以增强本征吸杂效果,在本征吸杂工艺的低温热退火中,用连续的线性缓慢升温(Ramping)退火替代常规的长时间低温恒温退火,应用于直拉(CZ)重掺N型硅衬底片,明显增加了氧沉淀等体微缺陷密度,这些高密度氧沉淀物在随后IC器件工艺中继续长大,成为稳定的高效本征吸杂中心。从经典的成核沉淀理论,讨论了Ramping热退火重掺硅衬底片增强氧沉淀机理。
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:532514
Date Available2010-11-23
Citation statistics
Cited Times:2[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18925
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王启元,王俊,韩秀峰,等. Ramping热退火直拉重掺锑硅衬底片的增强氧沉淀[J]. 半导体学报,1999,20(6):458.
APA 王启元.,王俊.,韩秀峰.,邓惠芳.,王建华.,...&林兰英.(1999).Ramping热退火直拉重掺锑硅衬底片的增强氧沉淀.半导体学报,20(6),458.
MLA 王启元,et al."Ramping热退火直拉重掺锑硅衬底片的增强氧沉淀".半导体学报 20.6(1999):458.
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