SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs/GaAlAs量子阱激子能量调谐的新方法
徐仲英; 王建农; 王玉琪; 葛惟锟; 李晴; 李树深
1999
Source Publication半导体学报
Volume20Issue:6Pages:488
Abstract用分子束外延技术(MBE)在GaAs量子阱中嵌入InAs亚单层,可以有效地改变量子阱的激子能量,从而达到波长调谐的目的。激子能量的调谐范围取决于量子阱宽度,并和InAs层厚度有关。利用有效质量近似,计算给出了能量调谐曲线,结果与实验符合较好。该文给出的结果提供了一种改变量子阱发光器件波长的新方法。
metadata_83中科院半导体所;香港科技大学物理系
Subject Area半导体物理
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:532519
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18923
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
徐仲英,王建农,王玉琪,等. GaAs/GaAlAs量子阱激子能量调谐的新方法[J]. 半导体学报,1999,20(6):488.
APA 徐仲英,王建农,王玉琪,葛惟锟,李晴,&李树深.(1999).GaAs/GaAlAs量子阱激子能量调谐的新方法.半导体学报,20(6),488.
MLA 徐仲英,et al."GaAs/GaAlAs量子阱激子能量调谐的新方法".半导体学报 20.6(1999):488.
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