SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
δ掺杂硅n-i-p-i结构多量子阱吸收边的漂移
程文超; 夏建白; 郑文硕; 黄醒良; 金载元; 林三镐; 瑞恩庆; 李亨宰
1999
Source Publication半导体学报
Volume20Issue:6Pages:497
Abstract该文报告了在δ掺杂硅n-i-p-i结构多量子阱中使用光电流技术观测到吸收边的场驱动蓝移,它不同于在GaAs和GeSi超晶格中观察到的结果。这个新现象能够被载流子注入引起有效带隙的展宽所解释。基于有效质量近似,计算了自洽势和有效带隙随额外载流子浓度的变化,理论结果证实了实验结果的正确性。
metadata_83中科院半导体所;半导体物理研究中心
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:532521
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18921
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
程文超,夏建白,郑文硕,等. δ掺杂硅n-i-p-i结构多量子阱吸收边的漂移[J]. 半导体学报,1999,20(6):497.
APA 程文超.,夏建白.,郑文硕.,黄醒良.,金载元.,...&李亨宰.(1999).δ掺杂硅n-i-p-i结构多量子阱吸收边的漂移.半导体学报,20(6),497.
MLA 程文超,et al."δ掺杂硅n-i-p-i结构多量子阱吸收边的漂移".半导体学报 20.6(1999):497.
Files in This Item:
File Name/Size DocType Version Access License
5508.pdf(320KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[程文超]'s Articles
[夏建白]'s Articles
[郑文硕]'s Articles
Baidu academic
Similar articles in Baidu academic
[程文超]'s Articles
[夏建白]'s Articles
[郑文硕]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[程文超]'s Articles
[夏建白]'s Articles
[郑文硕]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.