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浅离子注入InGaAs/InGaAsP SL-MQW激光器的混合蓝移效应
朱洪亮; 韩德俊; 胡雄伟; 汪孝杰; 王圩
1999
Source Publication半导体学报
Volume20Issue:6Pages:501
Abstract利用300keV的P~+离子对InGaAs/InGaAsP应变层多量子阱(MQW)激光器外延结构实施浅注入,经H_2/N_2混合气氛下的快速退火,结构的光致发光(PL)峰值波长蓝移了76nm,所作宽接触激光器的激射波长蓝移了77.9nm。发现具有应变结构的InGaAs/InGaAsP MQW,在较低的诱因素作用下即可产生较大的量子阱混合(intermixing)效应。
metadata_83中科院半导体所;北京师范大学低能核物理所
Subject Area光电子学
Funding Organization国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:532522
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18919
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
朱洪亮,韩德俊,胡雄伟,等. 浅离子注入InGaAs/InGaAsP SL-MQW激光器的混合蓝移效应[J]. 半导体学报,1999,20(6):501.
APA 朱洪亮,韩德俊,胡雄伟,汪孝杰,&王圩.(1999).浅离子注入InGaAs/InGaAsP SL-MQW激光器的混合蓝移效应.半导体学报,20(6),501.
MLA 朱洪亮,et al."浅离子注入InGaAs/InGaAsP SL-MQW激光器的混合蓝移效应".半导体学报 20.6(1999):501.
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