Multi-Wavelength  InGaAsP  Lasers  Grown  by  LP-MOCVD  Selective  Area  Growth

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Multi-Wavelength InGaAsP Lasers Grown by LP-MOCVD Selective Area Growth
	Xu GY(许国阳); Yan XJ(颜学进); Zhu HL(朱洪亮); Zhou F(周帆); Duan LH(段俐宏); Tian HL(田慧良); Bai YX(白云霞); Wang W(王圩)
	1999
Source Publication	半导体学报
Volume	20 Issue:6 Pages:506
metadata_83	中科院半导体所
Subject Area	半导体器件
Funding Organization	国家863计划
Indexed By	CSCD
Language	英语
CSCD ID	CSCD:532523
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/18917
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	Xu GY,Yan XJ,Zhu HL,et al. Multi-Wavelength InGaAsP Lasers Grown by LP-MOCVD Selective Area Growth[J]. 半导体学报,1999,20(6):506.
APA	许国阳.,颜学进.,朱洪亮.,周帆.,段俐宏.,...&王圩.(1999).Multi-Wavelength InGaAsP Lasers Grown by LP-MOCVD Selective Area Growth.半导体学报,20(6),506.
MLA	许国阳,et al."Multi-Wavelength InGaAsP Lasers Grown by LP-MOCVD Selective Area Growth".半导体学报 20.6(1999):506.

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