SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Multi-Wavelength InGaAsP Lasers Grown by LP-MOCVD Selective Area Growth
Xu GY(许国阳); Yan XJ(颜学进); Zhu HL(朱洪亮); Zhou F(周帆); Duan LH(段俐宏); Tian HL(田慧良); Bai YX(白云霞); Wang W(王圩)
1999
Source Publication半导体学报
Volume20Issue:6Pages:506
metadata_83中科院半导体所
Subject Area半导体器件
Funding Organization国家863计划
Indexed ByCSCD
Language英语
CSCD IDCSCD:532523
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18917
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Xu GY,Yan XJ,Zhu HL,et al. Multi-Wavelength InGaAsP Lasers Grown by LP-MOCVD Selective Area Growth[J]. 半导体学报,1999,20(6):506.
APA 许国阳.,颜学进.,朱洪亮.,周帆.,段俐宏.,...&王圩.(1999).Multi-Wavelength InGaAsP Lasers Grown by LP-MOCVD Selective Area Growth.半导体学报,20(6),506.
MLA 许国阳,et al."Multi-Wavelength InGaAsP Lasers Grown by LP-MOCVD Selective Area Growth".半导体学报 20.6(1999):506.
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